Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures

Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements

Hall effect measurements on undoped Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates were carried out as a function of the temperature (30–300 K) and magnetic field (0–1.4 T). Measurements were carried out under dark and after-illumination conditions. After the dark measurements, the samples were illuminated with a blue light emitting diode for 30 min, and then the same measu...

Hexagonal boron nitride and 6H-SiC heterostructures

Band discontinuities in zinc-blende and wurtzite AlN/SiC heterostructures

The AlN/SiC band discontinuities in zinc-blende ~110!, ~111!, and wurtzite ~0001! heterostructures were examined using the ab initio pseudopotential approach. At the nonpolar AlN/SiC~110! junction, we find a valence-band offset of 1.7 eV. At the polar heterojunctions the band alignment depends on the interface composition, and valence-band offsets as high as 2.5 eV are obtained for neutral inte...

Long-lived excitons in GaN/AlN nanowire heterostructures

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Graphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiC